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| (R) TYP512 TYP1012 SCR FOR OVERVOLTAGE PROTECTION A FEATURES High surge current capability High dI/dt rating High stability and reliability s s s G K DESCRIPTION The TYN512 and TYN1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for overvoltage protection in crowbar circuits application. K A G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM I2t ITM dI/dt Tstg Tj Tl Parameter RMS on-state current (180 conduction angle, single phase circuit) Average on-state current (180 conduction angle, single phase circuit) Non repetitive surge peak on-state current (Tj initial = 25C) I2t value Non repetitive surge peak on-state current (Tj initial = 25C) Exponential pulse wave form Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/s Storage and operating junction temperature range Maximum lead soldering temperature during 10s at 4.5mm from case Tc = 110C Tc = 110C tp = 8.3ms tp = 10ms tp = 10ms tp = 1ms Value 12 8 315 300 450 750 100 -40 to +150 -40 to +125 260 A2s A A/s C C Unit A A A TYP Symbol VDRM VRRM Parameter 512 Repetitive peak off-state voltage Tj = 125C 50 1012 100 V Unit September 2001 - Ed: 1A 1/5 TYP512 TYP1012 THERMAL RESISTANCE Symbol Rth (j-a) Rth (j-c) DC Junction to ambient Junction to case for DC Parameter Value 60 1.3 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20s) IFGM = 4A (tp = 20s) VRGM = 5V ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq VD = 12V (DC) VD = 12V (DC) VD = VDRM RL = 33 RL = 33 RL = 3.3k Test conditions Tj = 25C Tj = 25C Tj =125C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 125C Linear slope up to VD = 67% VDRM gate open VD=67%VDRM ITM= 50A VR= 25V dITM/dt=30 A/s dVD/dt= 50V/s Tj = 125C Tj = 125C MAX. MAX. MIN. TYP. TYP. MAX. MAX. MAX. MAX. MIN. TYP. Value 30 1.5 0.2 1 60 50 1.5 0.01 2 200 100 V/s s Unit mA V V s mA mA V mA VD = VDRM IG = 200mA dIG/dt = 1.5A/s IG = 1.2IGT IT = 500mA Gate open ITM = 50A VDRM rated VRRM rated tp = 380s 2/5 TYP512 Fig. 1: Maximum average power dissipation versus average on-state current. TYP1012 Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig. 3: Average on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. 3/5 TYP512 TYP1012 Fig. 8: On-state characteristics (maximum values). Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and corresponding value of I2t. Fig. 9: Peak capacitor discharge current versus pulse width. Fig. 10: Allowable peak capacitor discharge current versus initial junction temperature. 4/5 TYP512 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B C TYP1012 Millimeters 15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 2.65 1.14 1.14 2.60 14.00 0.511 10.40 0.393 0.88 0.024 1.32 0.048 4.60 0.173 0.70 0.019 2.72 0.094 2.70 0.094 6.60 0.244 3.85 0.147 2.95 0.104 1.70 0.044 1.70 0.044 15.90 0.598 Inches 0.625 0.147 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.116 0.066 0.066 0.102 Min. Typ. Max. Min. Typ. Max. A a1 a2 F b2 L I A B b1 b2 C c1 c2 e F I I4 L l4 a1 c2 l3 l2 a2 15.80 16.40 16.80 0.622 0.646 0.661 b1 e M c1 l2 l3 M OTHER INFORMATION Ordering type TYPx12 s s s s Marking TYPx12 Package TO-220AB Weight 2.3 g Base qty 250 Delivery mode Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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